Description
- Designator: TK100E10N1
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation: 255 W
- Maximum Drain-Source Voltage: 100 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Gate-Threshold Voltage: 4 V
- Maximum Drain Current 100A
- Maximum Junction Temperature: 150 °C
- Total Gate Charge: 140 nC
- Maximum Drain-Source On-State Resistance: 0.0034 Ohm






![(10PCS) FTP03N03N NEW MOSFET [30v150A]](https://powertak.in/wp-content/uploads/2023/09/20221224_151242_0000-300x300.png)
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