Description
- Designator: TK100E10N1
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation: 255 W
- Maximum Drain-Source Voltage: 100 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Gate-Threshold Voltage: 4 V
- Maximum Drain Current 100A
- Maximum Junction Temperature: 150 °C
- Total Gate Charge: 140 nC
- Maximum Drain-Source On-State Resistance: 0.0034 Ohm
There are no reviews yet.