IRFP4668 NEW ORIGINAL MOSFET 200V 130A PACK OF 2PCS

1. Applications

• High Efficiency Synchronous Rectification in SMPS
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits

Type Designator: IRFP4668

•    Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation 520 W
• Maximum Drain-Source Voltage: 200 V
• Maximum Gate-Source Voltage: 30 V
• Maximum Gate-Threshold Voltage: 5 V
• Maximum Drain Current
• 130 A
• Maximum Junction Temperature: 175
• Total Gate Charge: 161 nC
• Rise Time: 105 nS
•  Output Capacitance: 810 pF
•  Maximum Drain-Source On-State Resistance: 0.0097 Ohm