Description
- Input threshold current: IF=5mA(max.)
- Supply current (Icc): 11mA(max.)
- Supply voltage (Vcc): 10-35V
- Output current (Io): ±1.5A (max.)
- Switching time (tpLH/tpHL): 1.5µs(max.)
- Isolation voltage: 2500Vrms(min.)
- UL recognized: UL1577, file No. E67349
- Option (D4) type
- VDE approved: DIN VDE0884/06.92, certificate No.76823
- Maximum operating insulation voltage: 630VPK
- Highest permissible over voltage: 4000VPK
- The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector. This unit is 8-lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOSFET.
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