Description
- Marking Code: 110N8F6
- Type of Transistor: MOSFET
- Type of Control Channel N Channel
- Maximum Power Dissipation: 200 W
- Maximum Drain-Source Voltage: 80 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Gate-Threshold Voltage: 4.5 V
- Maximum Drain Current: 110 A
- Maximum Junction Temperature: 175 °C
- Total Gate Charge: 150 nC
- Rise Time: 61 nS
- Output Capacitance: 320 pF
- Maximum Drain-Source On-State Resistance: 0.0065 Ohm
- Package: TO-220
- STP110N8F6 substitution
There are no reviews yet.