Description
2003
Description
The LM2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications
General Features
●N-ChannelVDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V
P-Channel
VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V
High power and current handing capability ● Lead free product is acquired ● Surface mount package
